Li Jiang Ph.D.

Student Associate

Li Jiang's practice includes drafting and prosecuting patent applications related to semiconductors, optoelectronic devices, optical devices, microelectronic devices, and electrical circuits. Dr. Jiang also provides technical analysis and support to the firm’s litigation practice.

Dr. Jiang has a rich research experience related to semiconductors. While pursuing his Ph.D. at Virginia Polytechnic Institute and State University (Virginia Tech), Dr. Jiang worked as a research assistant in the Department of Materials Science and Engineering, where he focused on the study of performance characteristics of semiconductor quantum dot (QD) lasers. Before entering Virginia Tech, Dr. Jiang had also done a lot of work on semiconductor material growth and device fabrication, especially on those of III-V compound semiconductors. During his study, Dr. Jiang has gained extensive knowledge on subjects such as semiconductor physics, lasers, LEDs, optical waveguide, materials properties, and electrical circuits.

Highlights

• Worked as part-time translator for CCPIT Patent and Trademark Law Office in Beijing, China.

Select Publications

• First author. “Multimode Emission and Optical Power in a Semiconductor Quantum Dot Laser,” Nanotechnology, 2008.
• First author. “Internal-Loss-Limited Maximum Operating Temperature and Characteristic Temperature of Quantum Dot Laser,” Laser Physics Letters, 2007.
• First author. “Excited-State-Mediated Capture of Carriers Into the Ground State and the Saturation of Optical Power in Quantum-Dot Lasers,” IEEE Photonics Technology Letters, 2006.
• First author. “InP Based Long Wavelength Transmitter OEIC Structure Grown by MOCVD,” Chinese Journal of Semiconductors, 2005.
• First author. “Effects of V/III Ratio on InGaAs and InP Grown at Low Temperature by LP-MOCVD,” Journal of Crystal Growth, 2004.